Dimer elongation on the monohydride-covered Ge/Si(100) surface

Surface Science

Volumn 410, Issue 2-3, 1998, Pages

  Bailes III, A A ^a   Boshart, M A ^b   Seiberling, L E ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

Adatoms; Channeling; Epitaxy; High energy ion scattering (HEIS); Ion solid interactions; Scattering; Semiconducting surfaces; Single crystal epitaxy; Surface structure

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; HYDROGEN; IONS; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SCATTERING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

DIMER ELONGATION; ION CHANNELING; MONOHYDRIDE COVERED SURFACES;

SURFACE STRUCTURE;

EID: 0032140064     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00405-1     Document Type: Article

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