Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 633-636

  Takahashi, N ^a   Shiota, M ^a   Zhu, Y ^a   Shimizu, M ^a   Hirata, D ^b   Sakamoto, Y ^b   Sugino, T ^b   Shirafuji, J ^b  

^a SHARP CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Compensation; Damage; High electron mobility transistor (HEMT); InAlAs; Molecular beam epitaxy (MBE); Passivation; Plasma

Indexed keywords

EID: 0344971934     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666515     Document Type: Article

References (9)

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