Incorporation of fluorine into the N-type (AlXGaYIn1-X-Y)As system

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 415-420

  Hayafuji, N ^a   Yamamoto, Y ^a   Fujii, N ^a   Sonoda, T ^a   Takamiya, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; COMPOSITION; ELECTRIC PROPERTIES; FLUORINE; HEAT TREATMENT; HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; MODELS; MOLECULAR BEAM EPITAXY; PYROLYSIS;

COMPOSITIONAL RATIO; DONOR FLUORINE BONDS; DONOR FLUORINE SCATTERING EFFECT; DOUBLE CRYSTAL X RAY DIFFRACTION; GAS SOURCE MOLECULAR BEAM EPITAXY; VAN DER PAUW-HALL MEASUREMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029715081     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)