Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors

Solid-State Electronics

Volumn 39, Issue 4 SPEC. ISS., 1996, Pages 541-546

  Lim, Jongoh ^a   Ihn, Byounguk ^a   Kim, Bumman ^a   Lee, Kwangil ^b   Lee, Wonoh ^b   Lee, Seounghwan ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Research and Development Center   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); STRUCTURE (COMPOSITION);

DOPING PROFILE; DOUBLE-DIFFUSED MOS TRANSISTORS; EXTRACTION TECHNIQUE;

MOSFET DEVICES;

EID: 0030130112     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00187-5     Document Type: Article

References (5)

1. D. P. Kennedy and R. R. O'Brien, IBM J. Res. Dev. 9, 179 (1965).
2. D. C. D'Avanzo, S. R. Combs and R. W. Dutton, IEEE J. Solid-St. Circuits SC-12, 356 (1977).
3. SILVACO, Two-Dimensional Device Simulation. Silvaco International (1994).
4. Hewlett Packard, HP4275A multi-frequency LCR Meter - Operating Manual (1986).
5. P. Vitanov, U. Schwabe and I. Eisele, IEEE Trans. Electron Dev. ED-31, 96 (1984).