Saturation of multiplication mechanism in silicon avalanche photodiodes used for single electron detection

Review of Scientific Instruments

Volumn 69, Issue 8, 1998, Pages 2898-2901

  Osakabe, Nobuyuki ^a   Endo, Junji ^a   Tonomura, Akira ^a   Urakami, Tsuneyuki ^b   Ohsuka, Shinji ^b   Tsuchiya, Hiroshi ^b   Tsuchiya, Yutaka ^b   Kodama, Tetsuji ^c  

^a HITACHI LTD   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; ELECTRON ABSORPTION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; LASER PULSES; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON DETECTION; ELECTRON TRAJECTORIES; MULTIPLICATION FACTOR; SILICON AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0032132422     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1149030     Document Type: Article

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