A new theoretical model for the description of the degradation of silicon nitride films under high temperature annealing

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 647-651

  Gadiyak, G V ^a   Gadiyak, V G ^b   Kosinova, M L ^c   Salman, E G ^c,d  

^a INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^c NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

^d NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; COMPUTER SIMULATION; DECOMPOSITION; DEFECTS; DEHYDROGENATION; MATHEMATICAL MODELS; PHASE TRANSITIONS; THIN FILMS;

DEFECT TRANSFORMATION; FREE HYDROGEN; HIGH TEMPERATURE ANNEALING; KINETIC MODEL;

SILICON NITRIDE;

EID: 3643148097     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00824-0     Document Type: Article

References (5)

1. T.P. Smirnova, V.I. Belyi, L.V. Chramova et al., Physics of Semiconductors and Microelectronics, Ryazan (1976) 15 (in Russian).
2. A.V. Rzhanov, Silicon Nitride in Electronics (Nauka, Novosibirsk, 1982).
3. L.V. Chramova, T.P. Chusova and G.A. Kokovin, Thin Solid Films 147 (1987) 267.
4. Z.L. Akkerman, L.V. Chramova, T.P. Smirnova and V.I. Belyi, Inorganic Mater. 26 (1990) 988.
5. G.V. Gadiyak, ISSDT'95, The Fourth Int. Seminar on Simulation of Devices and Technol. Programme and Proc., Berg-en-Dal, Kruger National Park, South Africa (1995) p. 128.