High-power single-mode operation in DFB and FP lasers using diffused quantum-well structure

IEEE Journal of Quantum Electronics

Volumn 33, Issue 6, 1997, Pages 999-1008

  Yu, S F ^b,c,d,e,f   Lo, C W ^b   Li, E Herbert ^a,b  

^a IEEE

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d ROBINSON COLLEGE   (United Kingdom)

^e Department of Electronic Engineering   (Hong Kong)

^f Cambridge Commonwealth Trust Society   (Hong Kong)

Author keywords

Annealing; Diffusion processes; Distributed feedback lasers; Fabry Perot resonators; Laser modes; Quantum wells; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

ANNEALING; CURRENT DENSITY; DIFFRACTION GRATINGS; DISTRIBUTED FEEDBACK LASERS; LASER MODES; LIGHT SCATTERING; OPTICAL RESONATORS; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

FABRY PEROT LASERS; INJECTION CURRENT; SIDE MODE SUPPRESSION RATIO;

SEMICONDUCTOR LASERS;

EID: 0031162317     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.585488     Document Type: Article

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