Electrical characteristics of postoxidation annealed very thin SiO2 films. Potential benefits of rapid thermal processing

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 356-360

  Fonseca, L ^a   Campabadal, F ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDATION; RELAXATION PROCESSES; SILICA; STRESS RELAXATION; STRESSES;

ELECTRON TRAPPING REDUCTION; INTERFACIAL ELECTRICAL PROPERTIES; POSTOXIDATION ANNEALING; RAPID THERMAL REACTOR; THIN SILICA FILMS; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME ZERO DIELECTRIC BREAKDOWN; VISCOELASTIC;

THIN FILMS;

EID: 0029770958     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836436     Document Type: Article

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