Interdiffusion induced modification of surface-acoustic-wave AlGaAs-GaAs quantum-well modulators

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 758-764

  Choy, Wallace C H ^b,c,d   Weiss, Bernard L ^{a,b,d,e,f,g,h,i,j,k}  

^a IEEE

^b UNIVERSITY OF SURREY   (United Kingdom)

^c HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^d UNIVERSITY OF HONG KONG   (Hong Kong)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

^g University College London ^*

^h Sch Electron Eng Info T   (United Kingdom)

ⁱ UNIVERSITY OF CINCINNATI   (United States)

^j DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^k Institute of Physics   (United Kingdom)

more..

Author keywords

Diffused quantum well; Electroabsorption modulation; Modification of quantum well; Surface acoustic wave modulator

Indexed keywords

INTERDIFFUSION (SOLIDS); LIGHT ABSORPTION; LIGHT MODULATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSDUCERS;

ALUMINUM GALLIUM ARSENIDE; SURFACE-ACOUSTIC-WAVE QUANTUM-WELL MODULATORS;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0032117459     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720489     Document Type: Article

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