AlGaAs-GaAs quantum-well electrooptic phase modulator with disorder delineated optical confinement

IEEE Journal of Quantum Electronics

Volumn 34, Issue 1, 1998, Pages 84-92

  Choy, Wallace C H ^b,c,d   Weiss, Bernard L ^{a,b,c,e,f,g,h,i,j,k}   Li, E Herbert ^{a,b,c,l,m,n,o,p,q,r,s,t}  

^a IEEE

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

^d HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

^g UNIVERSITY OF CINCINNATI   (United States)

^h DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

ⁱ Institution of Electrical Engineers   (United Kingdom)

^j Institute of Physics   (United Kingdom)

^k Institution of Electrical Engineers ^*

^l Kirsten Aeronautical Laboratory   (United States)

^m KK Engineering Company   (Hong Kong)

ⁿ Micro Systems   (Hong Kong)

^o CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^p Optoelectronics Group

^q SHANDONG NORMAL UNIVERSITY   (China)

^r UNIVERSITY OF WATERLOO   (Canada)

^s Intl Advisory Committees of OECC   (Japan)

^t Technical Program   (South Korea)

more..

Author keywords

Electrooptic materials devices; Electrooptic modulation; Optical losses; Optical planar waveguides; Quantum wells; Semiconductor waveguides

Indexed keywords

ELECTROOPTICAL DEVICES; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ELECTROOPTIC MODULATION; SEMICONDUCTOR WAVEGUIDES; WAVEGUIDE PHASE MODULATORS;

LIGHT MODULATORS;

EID: 0031674705     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.655011     Document Type: Article

References (32)

1. G. W. Yoffe, J. Brubach, W. C. Van der Vleuten, F. Karouta, and J. H. Wolter, "Low voltage hetero-nipi wavelength modulators," Trans. Electron Devices, vol. 40, pp. 2144-2147, 1994.
2. S. Yoshida, Y. Tada, I. Kotaka, and K. Wakita, "InGaAs/InAlAs multiquantum well electroabsorption phase modulator module," Electron. Lett., vol. 30, pp. 1795-1796, 1994.
3. A. Ramdane, P. Krauz, E. V. K. Rao, A. Hamoudi, A. Ougazzaden, D. Robein, A. Gloukhian, and M. Carré, "Monolithic integration in InGaAs-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion," IEEE Photon. Technol. Lett., vol. 7, pp. 1016-1018, 1995.
4. B. L. Olmsted and S. N. Houde-Walter, "Dependence of Al-Ga interdiffusion in AlGaAs on stoichiometry between Ga-rich and As-rich solidus limits," Appl. Phys. Lett., vol. 60, pp. 368-370, 1992.
5. K. Kash, B. Tell, P. Grabbe, E. A. Dobisz, H. G. Graighead, and C. M. Tamargo, "Aluminum ion-implantation enhanced intermixing of GaAs-AlGaAs quantum-well structures," J. Appl. Phys., vol. 63, pp. 190-194, 1988.
6. B. L. Weiss, I. V. Bradley, N. J. Whitehead, and J. S. Roberts, "Disordering of AlGaAs/GaAs quantum well structures using low doses oxygen implantation," J. Appl. Phys., vol. 71, pp. 5715-5719, 1992.
7. 1-xAs-GaAs lasers defined by defect diffusion," Appl. Phys. Lett., vol. 49, pp. 510-512, 1986.
8. + masked implantation," J. Appl. Phys., vol. 70, pp. 1444-1450, 1991.
9. P. J. Poole, S. Charbonnesu, M. Dion, G. C. Aers, M. Buchana, R. D. Golderb, and I. V. Mitchell, "Demonstration of an ion-implanted wavelength-shifted quantum-well laser," IEEE Photon. Technol. Lett., vol. 8, pp. 16-18, 1996.
10. M. Ghisoni, G. Parry, M. Pate, G. Hill, and J. Roberts, "Post growth fabrication of GaAs/AlGaAs refection modulators via impurity free disordering," Jpn. J. Appl. Phys., vol. 30, pp. L1018-L1020, 1991.
11. E. Kapon, N. G. Stoffel, E. A. Dobisz, and R. Bhat, "Birefringent channel waveguides defined by impurity-induced superlattice disordering," Appl. Phys. Lett., vol. 52, pp. 351-353, 1988.
12. P. J. Bradley and G. Parry, "Optimized multiple quantum well phase modulator," Electron. Lett., vol. 25, pp. 1349-1350, 1989.
13. W. C. H. Choy, E. H. Li, and J. Micallef, "The polarization insensitive electro-absorptive and -refractive modulation by utilizing InGaAsP/InP interdiffused quantum well," IEEE J. Quantum Electron., vol. 33, pp. 1316-1323, 1997.
14. E. H. Li and W. C. H. Choy, "Modulation properties of InGaAsP/InP diffused quantum wells," J. Appl. Phys., Oct. 1997.
15. J. Micallef, E. H. Li, and B. L. Weiss, "Effect of interdiffusion on the polarization dependent refractive index of a strained InGaAs/GaAs quantum well," Appl. Phys. Lett., vol. 62, pp. 3164-3166, 1993.
16. W. C. H. Choy and E. H. Li, "The applications of interdiffused quantum well in normally-on electro-absorptive Fabry-Perot reflection modulation," IEEE J. Quantum Electron., vol. 33, pp. 382-393, 1997.
17. 1-xAs alloys," Phys. Rev. B, vol. 38, pp. 12345-12352, 1988.
18. G. J. Sonek, J. M. Ballantyne, Y. J. Chen, G. M. Carter, S. W. Brown, E. S. Koteles, and J. P. Slaerno, "Dielectric properties of GaAs/AlGaAs multiple quantum well waveguides," IEEE J. Quantum Electron., vol. QE-22, pp. 1015-1018, 1986.
19. E. H. Li and W. C. H. Choy, "The electro-optic effect in an interdiffusion induced AlGaAs/GaAs quantum well," IEEE Photon. Technol. Lett., vol. 7, pp. 881-883, 1995.
20. T. Y. Tan, U. Gösele, and S. Yu, "Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials," Critic. Rev. Solid State Mater. Sci., vol. 17, pp. 47-106, 1991.
21. xAs system," Phys. Rev. B, vol. 36, pp. 3243-3246, 1987.
22. 1-xAs/GaAs single-quantum-well structure," Phys. Rev. B., vol. 46, pp. 15180-15192, 1992.
23. S. J. Hewlett and F. Ladouceur, "Fourier deposition method applied to mapped infinite domains: Scalar analysis of dielectric waveguides down to modal cutoff," J. Lightwave Technol., vol. 13, pp. 375-383, 1995.
24. T. Hausken, R. H. Yan, R. I. Simes, and L. A. Coldren, "Relating the chirp parameter to the number of quantum wells in GaAs/AlGaAs waveguide modulators," Appl. Phys. Lett., vol. 55, pp. 718-720, 1989.
25. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, ch. 2, p. 99.
26. _, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, ch. 2, p. 195.
27. J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics: Semiconductors and Related Materials, 2nd ed. Stroudsburg, PA: Dowden, Hutchinson & Ross, 1975.
28. 1-xAs interfaces," Appl. Phys. Lett., vol. 49, pp. 223-225, 1986.
29. M. Glick, F. K. Reinhart, G. Weimann, and W. Schlapp, "Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap," Appl. Phys. Lett., vol. 48, pp. 989-991, 1986.
30. E. H. Li, "The effect of carriers on the optical properties of Al-GaAs/GaAs interdiffused quantum well lasers," SPIE Proc., vol. 2886, pp. 151-160, 1996.
31. 1-xAs quantum wells," Phys. Rev. B, vol. 51, pp. 1938-1941, 1995.
32. J. E. Zucher, T. L. Hendrickson, and C. A. Borrus, "Low voltage phase modulation in GaAs/AlGaAs quantum well optical waveguides," Electron. Lett., vol. 24, pp. 112-113, 1988.