Void formation in gallium arsenide crystals grown in microgravity

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 112-119

  Kaforey, M L ^a   Bly, J M ^a   Matthiesen, D H ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ARSENIC; CRYSTAL GROWTH FROM MELT; MELTING; MICROGRAVITY PROCESSING; PHASE INTERFACES; SEMICONDUCTING SELENIUM; SEMICONDUCTOR DOPING; SOLIDIFICATION; VAPORIZATION; X RAY CRYSTALLOGRAPHY;

CRYSTAL GROWTH FURNACE (CGF);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547402     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01087-1     Document Type: Article

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