Nitride layers formed by nitrogen implantation with an energy scanning mode

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 296-300

  Miyagawa, Y ^a   Nakao, S ^a   Ikeyama, M ^a   Saitoh, K ^a   Miyagawa, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Energy scanning implantation; High dose implantation; Nitrogen implantation; Radiation damage; Surface modification

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; NITRIDES; NITROGEN; RADIATION DAMAGE; SURFACE TREATMENT; ZIRCONIUM;

ENERGY SCANNING MODE; MONO ENERGETIC IMPLANTATION; NITROGEN IMPLANTATION; SOFTWARE PACKAGE SASAMAL; STOICHIOMETRIC CONCENTRATION;

ION IMPLANTATION;

EID: 0032116634     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00073-X     Document Type: Article

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