RHEED-AES observation of In desorption on a single-domain Si(001)-(1 × 2) surface

Surface Science

Volumn 410, Issue 1, 1998, Pages 99-105

  Kim, K S ^a   Takakuwa, Y ^a   Abukawa, T ^a   Kono, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Auger electron spectroscopy (AES); Indium; Metal insulator interfaces; Reflection high energy electron diffraction (RHEED); Silicon; Thermal desorption spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; INDIUM; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE STRUCTURE;

METAL INSULATOR INTERFACES; THERMAL DESORPTION SPECTROSCOPY;

DESORPTION;

EID: 0032115866     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00305-7     Document Type: Article

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