A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 661-668

  Saher Helmy, Amr ^a,b   Johnson, N P ^a,b   Ke, M L ^b   Bryce, A Catrina ^a,b   Aitchison, J Stewart ^a,b   Marsh, John H ^a,b   Gontijo, Ivair ^b,c,e,f,g,h   Buller, Gerald S ^b,c,f   Davidson, J ^d   Dawson, P ^d  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c Department of Physics ^*  (United Kingdom)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^f HERIOT WATT UNIVERSITY   (United Kingdom)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h OPTICAL SOCIETY OF AMERICA   (United States)

Author keywords

Diffusion processes; Optical spectroscopy; Quantum heterostructures; Quantum well interdiffusion

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; INTERDIFFUSION (SOLIDS); OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; IMPURITY-FREE VACANCY DISORDERING (IFVD); QUANTUM-WELL INTERMIXING (QWI);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032114705     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720477     Document Type: Article

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