IBM advanced lithography facility: The first five years

Solid State Technology

Volumn 41, Issue 7, 1998, Pages 101-115

  Lesoine, L Grant ^a,b   Leavey, Jeffrey A ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; MASKS; SYNCHROTRON RADIATION;

ADVANCED LITHOGRAPHY FACILITIES (ALF); ELECTRON STORAGE RINGS (ESR);

X RAY LITHOGRAPHY;

EID: 0032108946     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (12)

1. D. Morris et al., "Micromachining Using Helios," SPIE, 2437, pp. 134-138, 1995.
2. L.G. Lesoine et al., "ALF: A Facility for X-ray Lithography," 1263, Proc. SPIE pp. 131-139, 1990.
3. L.G. Lesoine, K. Kukkonen, J. Leavey, "ALF: A Facility for X-ray Lithography II: A Progress Report," Proc. SPIE, 1671, 299-311, 1992.
4. J. Leavey, L.G. Lesoine, "Design Considerations for the IBM X-ray Lithography Facility," IBM J. of Research and Development, Vol. 37, No. 3, 1993.
5. A. Chen et al., "First X-ray Stepper in IBM Advanced Lithography Facility," J. Vac. Sci. Technol. B, Vol. 10, No. 6, p. 2628, 1992.
6. A. Chen et al., "Evaluation of the Defense Advanced Lithography Program (DALP) X-ray Lithography Aligner," Proc. SPIE, 3048, p. 200, 1997.
7. Private communication, R. Rippstein, IBM Microelectronics Division, 1997.
8. H. I. Smith, F. Cerrina, "X-ray Lithography for ULSI Manufacturing," Microlithography World, Vol. 6, No. 1, p. 10, 1997.
9. B. Bollepalli et al., "Simulation of X-ray Mask Defect Printibility," Proc. SPIE, 3048, p. 155, 1997.
10. ALF internal review of mask verification prints by J. Leavey, 1997.
11. Helios-2 literature, Oxford Instruments.
12. Dempa Newspaper, Mitsubishi, March 12, 1997.