Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 214-218

  Fischer, F ^a   Waag, A ^a   Worschech, L ^a   Ossau, W ^a   Scholl, S ^a   Landwehr, G ^a   Makinen J ^b   Hautojarvi P ^b   Corbel, C ^c  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b AALTO UNIVERSITY   (Finland)

^c CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HALOGEN COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES;

CADMIUM TELLURIDE; DONOR IMPURITIES; HALOGEN DOPING; POSITRON ANNIHILATION MEASUREMENTS; SELF COMPENSATION;

CADMIUM ALLOYS;

EID: 0030124801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00646-X     Document Type: Article

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