Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 439-442

  Prinz, V Ya ^a   Seleznev, V A ^a   Samoylov, V A ^a   Gutakovsky, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; CRYSTAL LATTICES; ELASTICITY; HETEROJUNCTIONS; MASKS; MECHANICAL PROPERTIES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; STRESSES;

ATOMIC SCALE DEVICE ELEMENTS; ATOMICALLY SHARP EDGED CRACKS; LATERAL SEMICONDUCTOR VACUUM; NANOSCALE ENGINEERING; ULTRANARROW WINDOW SLITS; ULTRATHIN CRACKS;

NANOTECHNOLOGY;

EID: 0029733002     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00282-0     Document Type: Article

References (8)

1. E.S. Snow and P.M. Cambel. Appl. Phys. Lett. 64 (1994) 1932.
2. V.Ya. Prinz, V.A. Seleznev, A.K. Gutakovsky in: Heterostructure in Science and Technology. International Symposium (Wuzburg, 1995) 112.
3. E.B. Gorokhov, A.G. Noskov, V.Ya. Prinz. Material Science Forum 185-188 (1995) 129.
4. V.Ya. Prinz, V.A. Seleznev, A.K. Gutakovsky International Conference on the Properties of Two Dimensional Systems. Nottigham (1995) 493.
5. V.Ya. Prinz, V.A. Seleznev, V.A. Tkachenko in Nanostructures: Physics and Technology. International symposium (1995) 262.
6. K. Yasutake, Y. Konishi, K. Adachi et al. Jap. J. Appl. Phys. 27 (1988) 2238.
7. E. Yablonovitch, T. Gmitter, J.P. Harbison, and R. Bhat. Appl. Phys. Lett. 51(1987) 2222.
8. V.Ya. Prinz, I.A. Panaev, V.V. Preobrazhenskii, and B.R. Simyagin. JETP Lett. 60 (1994) 217