Novel technique for fabrication of one- and two-dimensional systems

Surface Science

Volumn 361-362, Issue , 1996, Pages 886-889

  Prinz, V Ya ^a   Seleznev, V A ^a   Gutakovsky, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Gallium arsenide; Semiconductor semiconductor heterostructures; Tunneling

Indexed keywords

CRACK PROPAGATION; ELECTRON TUNNELING; MASKS; MULTILAYERS; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

ATOMIC SCALE DEVICE ELEMENTS; GALLIUM ARSENIDE LAYER MASK; QUANTUM SYSTEMS; SHARP EDGED CRACKS; ULTRATHIN SEMICONDUCTOR MEMBRANE;

HETEROJUNCTIONS;

EID: 0030192732     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00557-2     Document Type: Article

References (4)

1. V.Ya. Prinz, V.A. Seleznev and A.K. Gutakovsky in: Heterostructures in Science and Technology, International Symposium (Wuzburg, Germany, 1995) p. 112.
2. E.B. Gorokhov, A.G. Noskov and V.Ya. Prinz, Mater. Sci. Forum 129 (1995) 185.
3. E. Yablonovitch, T. Gmitter, J.P. Harbison and R. Bhat, Appl. Phys. Lett. 51 (1987) 2222.
4. V.Ya. Prinz, I.A. Panaev, V.V. Preobrazhenskii and B.R. Simyagin, JETP Lett. 60 (1994) 217.