Fabrication of thick Si resonators with a frontside-release etch-diffusion process

Journal of Microelectromechanical Systems

Volumn 7, Issue 2, 1998, Pages 201-206

  Weigold, J W ^{a,b,c,d,e,f,g,h}   Pang, S W ^a,b,d,i,j  

^a IEEE   (United States)

^b University of Michigan   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

^e ANALOG DEVICES INC   (United States)

^f SPIE ^*  (United States)

^g ELECTROCHEMICAL SOCIETY   (United States)

^h American Vacuum Society   (United States)

ⁱ PRINCETON UNIVERSITY   (United States)

^j MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

more..

Author keywords

Deep etching; Etch diffusion; Frontside release; Silicon resonator

Indexed keywords

CRYSTAL MICROSTRUCTURE; DRY ETCHING; ELECTRIC FREQUENCY MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; NATURAL FREQUENCIES; RESONATORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

FRONTSIDE-RELEASE ETCH DIFFUSION PROCESS; SILICON RESONATORS;

MICROELECTROMECHANICAL DEVICES;

EID: 0032099623     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.679382     Document Type: Article

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