Ultra-high fmax and fT InP/InGaAs double-heterojunction bipolar transistors with step-graded InGaAsP collector

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 345-348

  Yamahata, S ^a   Kurishima, K ^a   Nakajima, H ^a   Kobayashi, T ^a   Matsuoka, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENT COLLECTORS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); METALLORGANIC VAPOR PHASE EPITAXY; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

BASE; COLLECTORS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER VOLTAGE; EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028712964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)