16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 96-99

  Kimura, Shunji ^a   Imai, Yuhki ^a   Umeda, Yohtaro ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC LINES; ELECTRIC NETWORK SYNTHESIS; FREQUENCIES; INTEGRATED CIRCUITS; MICROWAVE AMPLIFIERS; OPTICAL SYSTEMS; SCHEMATIC DIAGRAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ARTIFICIAL LINE; DISTRIBUTED BASEBAND AMPLIFIER; DRAIN ARTIFICIAL LINE; GAIN BANDWIDTH PRODUCT; LOSS COMPENSATION CIRCUIT; LUMPED CIRCUIT; MILLIMETER WAVE BANDWIDTH; PARASITIC CAPACITANCE; SYNCHRONOUS DIGITAL HIERARCHY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028710983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)