InAlAs/AlAsSb type II multiple quantum well layers lattice-matched to InP grown molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6, 1997, Pages

  Kawamura, Yuichi ^a   Kurisu, Hirokazu ^a   Yoshimatsu, Kiyotsune ^a   Kamada, Akihiro ^a   Naito, Yoshihiro ^a   Inoue, Naohisa ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

LATTICE MATCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031152781     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l757     Document Type: Article

References (13)