Optical bistability of in0.52Al0.48As/InP type II multi-quantum well diodes

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1729-1730

  Kawamura, Y ^a   Hakone, Y ^a   Iwamura, H ^b   Ito, T ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Optical histability; Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ELECTRON TUNNELING; LIGHT EMISSION; OPTICAL BISTABILITY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

CURRENT LIGHT OUTPUT CHARACTERISTICS; MULTIQUANTUM WELL DIODES;

SEMICONDUCTOR LASERS;

EID: 0030217264     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961133     Document Type: Article

References (10)

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