Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber

Journal of Crystal Growth

Volumn 173, Issue 1-2, 1997, Pages 21-26

  Yamamoto, K ^a   Asahi, H ^a   Miki, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIMONY COMPOUNDS; BOND STRENGTH (CHEMICAL); ETCHING; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MONOLAYERS; ORGANOMETALLICS; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; THERMAL EFFECTS;

METALLORGANIC MOLECULAR BEAM ETCHING; QUADRUPOLE MASS SPECTROMETER (QMS); SURFACE RECONSTRUCTION; TRIISOPROPYLANTIMONY; TRISDIMETHYLAMINOANTIMONY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031546883     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00794-4     Document Type: Article

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