Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 117-121

  Yamamoto, K ^a   Asahi, H ^a   Hayashi, T ^a   Asami, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARRIER CONCENTRATION; DECOMPOSITION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ETCHING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SURFACES;

FULL WIDTH AT HALF MAXIMUM; HIGH INDEX SURFACES; HOLE MOBILITY; METALLORGANIC MOLECULAR BEAM EPITAXY; TRIETHYLGALLIUM; TRISDIMETHYLAMINOANTIMONY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030190174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01065-3     Document Type: Article

References (17)

1. J.R. Söderström, D.H. Chow and T.C. McGill, J. Appl. Phys. 66 (1989) 5106.
2. J.D. Werking, C.R. Bolognesi, L.D. Chang, C. Nguyen, E.L. Hu and H. Kroemer, IEEE Electron Dev. Lett. 13 (1992) 164.
3. H.K. Choi, G.W. Turner and Z.L. Liau, Appl. Phys. Lett. 65 (1994) 2251.
4. H. Asahi, T. Kaneko, Y. Okuno, Y. Itani, K. Asami and S. Gonda, J. Crystal Growth 120 (1992) 252.
5. Y. Itani, H. Asahi, T. Kaneko, Y. Okuno and S. Gonda, J. Appl. Phys. 73 (1993) 1161.
6. T. Kaneko, H. Asahi, T. Itani, Y. Okuno and S. Gonda, J. Crystal Growth 111 (1992) 638.
7. H. Asahi, X.F. Liu, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda, J. Crystal Growth 145 (1994) 668.
8. X.F. Liu, H. Asahi, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda, Appl. Phys. Lett. 65 (1994) 1027.
9. J. Shin, A. Verma, G.B. Stringfellow and R.W. Gedridge, Jr., J. Crystal Growth 151 (1995) 1.
10. J. Shin, A. Verma, G.B. Stringfellow and R.W. Gedridge, Jr., J. Crystal Growth 143 (1994) 15.
11. X.F. Liu, H. Asahi, K. Inoue, D. Marx, K. Asami, K. Miki and S. Gonda, J. Appl. Phys. 77 (1995) 1952.
12. A.B. Villaflor, H. Asahi, D. Marx, K. Miki, K. Yamamoto and S. Gonda, J. Crystal Growth 150 (1995) 638.
13. D. Marx, K. Miyamoto, H. Asahi, X.F. Liu, A.B. Villaflor, K. Miki, S. Gonda, S. Shimomura and S. Hiyamizu, J. Crystal Growth 150 (1995) 874.
14. H. Asahi, T. Kaneko, Y. Okuno and S. Gonda, Jpn. J. Appl. Phys. 32 (1993) 2786.
15. W.T. Tsang, T.H. Chiu, J.E. Cunningham and A. Robertson, Appl. Phys. Lett. 50 (1987) 1376.
16. M. Lee, D.J. Nicholas, K.E. Singer and B. Hamilton, J. Appl. Phys. 59 (1986) 2895.
17. G.W. Turner, S.J. Eglash and A.J. Strauss, J. Vac. Sci. Technol. B 11 (1993) 864.