Growth characteristics of C60 films on fluorophlogopite and silicon substrates

Thin Solid Films

Volumn 323, Issue 1-2, 1998, Pages 309-316

  Chen, Guanghua ^a,b   Ma, Guobin ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Growth characteristics; Helium gas; Hot wall technique; Orientational properties; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; FULLERENES; GRAIN SIZE AND SHAPE; HELIUM; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES;

HOT WALL TECHNIQUE;

SUPERCONDUCTING FILMS;

EID: 0032098117     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01048-1     Document Type: Article

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