GaAs growth selectivity using a GaN mask by MOMBE

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 414-418

  Yoshida, Seikoh ^a   Sasaki, Masahiro ^a  

^a Yokohama R & D Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL ORIENTATION; DESORPTION; MASKS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE PHENOMENA; SURFACE STRUCTURE;

DIMETHYLHYDRAZINE; GALLIUM NITRIDE; METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE); QUADRUPOLE MASS SPECTROMETRY (QMS); SELECTIVE AREA GROWTH (SAG) METHOD; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032096669     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00093-2     Document Type: Article

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