Pulsed trimethylgallium beam scattering from variously reconstructed GaAs surfaces

Surface Science

Volumn 357-358, Issue , 1996, Pages 863-867

  Sasaki, Masahiro ^a,b   Yoshida, Seikoh ^a  

^a Optoelectronics Technology Research Laboratory   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Adsorption kinetics; Alkyl gallium; Chemical vapor deposition; Gallium arsenide; Molecular beam epitaxy; Molecule solid scattering and diffraction inelastic; Single crystal surfaces; Surface chemical reaction; Surface relaxation and reconstruction

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; DIFFRACTION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; RELAXATION PROCESSES; SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACES;

ALKYL GALLIUM; PRECURSOR STATE; SURFACE CHEMICAL REACTION; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0030169221     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00279-8     Document Type: Article

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