Surface-roughening processes in GaAs MBE studied by in situ scanning electron microscopy

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 205-210

  Tanahashi, K ^a   Kawamura, Y ^a   Inoue, N ^a   Homma, Y ^b   Osaka, J ^b  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Electron microscopy; GaAs; Molecular beam epitaxy; Surface roughening

Indexed keywords

MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

QUASI SMOOTH GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032095338     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00066-9     Document Type: Article

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