Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3575-3581

  Inoue, Naohisa ^a   Morimoto, Keizo ^a   Araki, Tsutomi ^a   Ito, Taichiro ^a   Homma, Yoshikazu ^b   Osaka, Jiro ^b  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON BEAMS; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; SURFACES;

ANNIHILATION PROCESS; MONOLAYER DEEP HOLES; MONOLAYER ISLANDS; SURFACE SMOOTHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030289003     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588545     Document Type: Article

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