Two-dimensional to one-dimensional mode change in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 286-291

  Inoue, N ^a   Kawamura, Y ^a   Homma, Y ^b   Osaka, J ^b   Araki, T ^a   Ito, T ^a  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE DIAGRAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH;

NUCLEATION MODE GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141086     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00938-4     Document Type: Article

References (10)

1. N. Inoue, J. Crystal Growth 146 (1995) 334.
2. J. Osaka, N. Inoue and Y. Homma, Appl. Phys. Lett. 66 (1995) 2110.
3. N. Inoue, J. Osaka and Y. Homma, J. Crystal Growth 164 (1996) 88.
4. T. Shitara, J. Zhang, J.H. Neave and B.A. Joyce, J. Appl. Phys. 71 (1992) 4299.
5. T. Ide, A. Yamashita and T. Mizutani, Phys. Rev. Lett. B 46 (1992) 1905.
6. M. Ichikawa and T. Doi, Appl. Phys. Lett. 50 (1987) 1141.
7. R.L. Schwoebel and E.J. Shipsey, J. Appl. Phys. 37 (1966) 3682.
8. N. Ionue, Adv. Mater. 5 (1993) 192.
9. P.R. Pukite, C.S. Lent and P.I. Cohen, Surf. Sci. 161 (1985) 39.
10. J. Sudijono, M.D. Johnson, M.B. Elowitz, C.W. Snyder and B.G. Orr, Surf. Sci. 280 (1993) 247.