Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

Materials Research Society Symposium - Proceedings

Volumn 429, Issue , 1996, Pages 343-347

  Sun, J ^a   Bartholomew, R F ^a   Bellur, K ^a   O'Neil, P A ^a   Srivastava, A ^a   Violette, K E ^a   Ozturk, M C ^a   Osburn, C M ^a   Masnari, N A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILANES; THERMAL CYCLING;

LOW TEMPERATURE SELECTIVE DEPOSITION; SELECTIVE EPITAXIAL GROWTH; THERMAL BUDGET; UHV RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

MOSFET DEVICES;

EID: 0030407495     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-429-343     Document Type: Conference Paper

References (11)