A 0.25 μm MOSFET technology using in situ rapid thermal gate dielectrics

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 744-749

  Zhang, Kevin X ^a,c   Osburn, Carlton M ^b   Hames, Greg ^b   Parker, Chris ^b   Bayoumi, Amr ^b  

^a Duke University   (United States)

^b North Carolina State University   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); OXIDATION; OXIDES; SEMICONDUCTOR JUNCTIONS;

GATE INDUCED DRAIN LEAKAGE; IN SITU RAPID THERMAL GATE DIELECTRICS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; RAPID THERMAL OXIDATION; RAPID THERMAL PROCESSING; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

MOSFET DEVICES;

EID: 0030085630     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836511     Document Type: Article

References (19)

1. J. R. Hauser, N. A. Masnari, and M. A. Littlejohn, Mater. Res. Symp. Proc., 15, 146 (1989).
2. L. A. Larson, SEMATECH, Private communication.
3. M. M. Moslehi, R. A. Chapman, M. Wong, A. Paranjpe, H. N. Najm, J. Kuehne, R. L. Yeakley, and C. J. Davis, IEEE Trans. Electron Devices, ED-39, 4 (1992).
4. C. M. Osburn, J. Electron. Mater., 19, 67 (1980).
5. R. A. Chapman, M. Rodder, M. M. Moslehi, L. Velo, J. W. Kuehne, and A. P. Lane, in Proceedings of the International Symposium on VLSI Technology, Taipei, Taiwan, May 12-14 (1993).
6. J. Nulman, J. P. Krusius, and A. Gat, IEEE Electron Dev. Lett., EDL-6, 205 (1985).
7. S. T. Ang and J. J. Wortman, This Journal, 133, 2361 (1986).
8. X. Xu, R. Kuehn, J. Wortman, and M. Ozturk, Appl. Phys. Lett., 60, 3063 (1992).
9. G. Lucovsky and D. Tsu, J. Vac. Sci. Technol., A5, 2231 (1987).
10. J. A. Appels, E. Kooi, M. M. Paffen, J. J. H. Schatorje, and W. H. C. G. Verkuylen, Philips Research Reports, 25, 118 (1970).
11. M. D. Kellam, S. Goodwin-Johansson, S. Jones, B. Dudley, and C. Peters, in ULSI Science and Technology/1991, J. M. Andrews and G. K. Celler, Editors, PV 91-11, p. 131, The Electrochemical Society Proceedings Series, Pennington, NJ (1991).
12. SSUPREM4 User's Manual, SIVACO SUPREM4, version 5.0, 1992.
13. J. Chung, M. C Jeng, J. E. Moon, A. T. Wu, T. Y. Chang, P. K. Ko, and C. Hu, Electron Device Lett., 19, 186 (1988).
14. C. M. Osburn, S. Chevacharoenkul, and G. E. McGuire, This Journal, 39, 2287 (1992).
15. D. S. Wen, S. H. Goodwin-Johansson, and C. M. Osburn, IEEE Trans. Electron Devices, ED-35, 1107 1988.
16. K. X. Zhang and C. M. Osburn, submitted to IEEE Trans. Electron Devices.
17. R. P. Vasquez and A. Madhukar, Appl. Phys. Lett., 47, 998 (1985).
18. Z. Lu, Private communication.
19. W.G. Meyer and R.B. Fair, IEEE Trans. Electron Devices, ED-30, 96 (1983).