Exciton luminescence of single-crystal GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 607-612

  Muellhaeuser, J R ^a   Brandt, O ^a   Yang, H ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISSOCIATION; ELECTRONS; EPITAXIAL GROWTH; EXCITONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

EXCITATION DENSITY; EXCITON DISSOCIATION; GALLIUM NITRIDE; HOLE TRAPPING; LINE SHAPE ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029746078     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)