Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 720-724

  Kim, C Y ^a   Kim, S W ^a   Hong, C H ^a   Kim, D W ^a   Baik, H K ^b   Whang, C N ^b  

^a LG   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Abrupt interface; AuSiTi n GaN system; Low barrier model; Low work function; Ohmic contact; Titanium silicide

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GOLD COMPOUNDS; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; TITANIUM SILICIDE;

OHMIC CONTACTS;

EID: 0032090698     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00270-X     Document Type: Article

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