GaN/BAlN heterostructure grown on a (0 0 0 1)6H-SiC substrate by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 445-447

  Shibata, M ^a   Kurimoto, M ^a   Yamamoto, J ^a   Honda, T ^a   Kawanishi, H ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

FULL WIDTH AT HALF MAXIMUM (FWHM); LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (LP MOVPE);

SEMICONDUCTOR GROWTH;

EID: 0032089855     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00327-3     Document Type: Article

References (7)

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7. T. Shirasawa et al., J. Crystal Growth 189/190 (1998) 124.