Development of K-Band front-end devices for broadband wireless communication systems using millimeter-wave flip-chip 1C technology

IEICE Transactions on Electronics

Volumn E81-C, Issue 6, 1998, Pages 827-832

  Takahashi, Kazuaki ^a   Fujita, Suguru ^a   Yabuki, Hiroyuki ^a   Yoshida, Takayuki ^a   Ikeda, Yoshito ^a   Sakai, Hiroyuki ^a   Sagawa, Morikazu ^a  

^a Matsushita Research Institute Tokyo Inc   (Japan)

Author keywords

Flip chip; HFET. HBT; Micro bump bonding; Millimeter wave

Indexed keywords

BANDWIDTH; BONDING; BROADBAND AMPLIFIERS; BROADBAND NETWORKS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADIO COMMUNICATION;

LOW NOISE AMPLIFIERS (LNA); MICRO BUMP BONDING (MBB); MILLIMETER WAVE FLIP CHIP INTEGRATED CIRCUITS (MFIC);

FLIP CHIP DEVICES;

EID: 0032089799     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. M. Kotaki and Y. Takimoto, "Recent development of millimeter-wave applications in Japan," MWE'95 Digest, pp. 215-220, 1995.
2. H. Fukuhara, "Essential issues involved in automotive millimeter-wave radar systems," MWE'95 Digest, pp.221 -224, 1995.
3. H. Matsue, M. Umehira, and A. Hashimoto, "Future trend of broadband wireless access systems and their core technologies," M\VE'96 Digest, pp. 271-276.
4. P. M. Smith, "Status of InP HEMT technology for microwave receiver applications," IEEE 1996 MTT-S Digest, pp. 5-8, 1996.
5. L. Tran, R. Isobe, M. Delaney, R. Rhodes, D. Jang, J. Brown, L. Nguyen, M. Le, M. Thompson, and T. Liu, "High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs," IEEE 1996 MTT-S Digest, pp. 9-12, 1996.
6. H. Sakai, Y. Ota, K. Inoue, T. Yoshida, K. Takahashi, S. Fujita, and M. Sagawa, "A novel millimeter-wave 1C on Si substrate using flip-chip bonding technology," 1994 IEEE MTT-S Symp. Digest, pp. 1763-1766, 1994.
7. H. Sakai, Y. Ota, K. Inoue, T. Yoshida K. Takahashi, S. Fujita, and M. Sagawa, "A novel millimeter-wave 1C on Si substrate using flip-chip bonding technology," IEICE Trans. Electron., vol. E78-C, no. 8, 1995.
8. H. Sakai, Y. Ota, K. Inoue, M. Yanagihara, T. Matsuno, M. Tanabe, T. Yoshida, Y. Ikeda, S. Fujita, K. Takahashi, and M. Sagawa, "A millimeter-wave flip-chip 1C using micro bump bonding technology," 1996 IEEE ISSCC Digest, pp. 408-409, 1996.
9. K. Takahashi, T. Yoshida, H. Sakai, and M. Sagawa. "An advanced millimeter-wave flip-chip 1C integrating different kinds of active devices," 1996 IEEE MTT-S Symp. Digest, pp. 1919-1922, 1996.
10. K. Takahashi, T. Yoshida, and H. Sakai, "Millimeterwave circuit technology applying flip-chip bonding," MWE'96 Digest, pp. 180-185, 1996.
11. K. Hatada, H. Fujimoto, T. Kawakita, and T. Ochi, "A New LSI bonding technology 'Micron Bump Bonding Assembly Technology'," IEEE CHMT International Electronic Manufacturing Technology Symposium Proceedings, pp. 23-27, 1988.
12. K. Hatada, H. Fujimoto, T. Ochi, and Y. Ishida, "LED array modules by new technology microbump bonding method," IEEE Trans. Components, Hybrids and Manufacturing Technology, vol. 13, no. 3, pp. 521-527, 1990. [13] F. Ali, A. Gupta, and A. Higgins, "Advances in GaAs HBT power amplifiers for cellular phones and military applications," 1996 IEEE MMWMC Symp., pp. 61-66, 1996.
13. M. Tanabe, T. Matsuno, H. Sakai, M. Yanagihara, K. Inoue, and A. Tamura, "0.1 pm AlGaAs/InGaAs HEMT fabrication by UV-lithography," Electronics Society Proceedings, vol. 95-21, pp. 416-422, 1995.
14. max AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode," IEDM Tech. Digest, pp. 416-422, 1995.
15. S. A. Maas, "Microwave Mixers, second edition," Artech House, Inc., 1993.