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Volumn 41, Issue 6, 1998, Pages 171-X

RTP technology for tomorrow

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC FURNACES; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SURFACE CLEANING; THERMOANALYSIS; TRANSIENTS;

EID: 0032083811     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (9)
  • 1
    • 0032028618 scopus 로고    scopus 로고
    • Process Simplification in DRAM Manufacturing
    • R.P.S. Thakur et al., "Process Simplification in DRAM Manufacturing," IEEE Transactions on Electron Devices, Vol. 45, No. 3, p. 609, 1998.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.3 , pp. 609
    • Thakur, R.P.S.1
  • 2
    • 0347858609 scopus 로고    scopus 로고
    • Rapid Thermal Processing and ULSI Electronics
    • R.P.S. Thakur, "Rapid Thermal Processing and ULSI Electronics," in Semi-conductor Fabtech, 5th ed., p. 261, 1996.
    • (1996) Semi-conductor Fabtech, 5th Ed. , pp. 261
    • Thakur, R.P.S.1
  • 4
    • 0030679335 scopus 로고    scopus 로고
    • Boron-implanted Shallow Junction Formation by High-temperature/Short-time/High-ramping-rate (400°C/sec) RTA
    • 1997 Symposium on VLSI Technology
    • S. Shishiguchi et al., "Boron-implanted Shallow Junction Formation by High-temperature/Short-time/High-ramping-rate (400°C/sec) RTA," Digest of Technical Papers, 1997 Symposium on VLSI Technology, pp. 89-90, 1997.
    • (1997) Digest of Technical Papers , pp. 89-90
    • Shishiguchi, S.1
  • 6
    • 0343233759 scopus 로고
    • A Manufacturable Process for the Formation of Self-aligned Cobalt Suicide in a Submicrometer CMOS Technology
    • A.C. Berti, V. Bolkhovsky, "A Manufacturable Process for the Formation of Self-aligned Cobalt Suicide in a Submicrometer CMOS Technology," Proc., 1992 VLSI Multilevel Interconnect Conference (VMIC), pp. 267-273, 1992.
    • (1992) Proc., 1992 VLSI Multilevel Interconnect Conference (VMIC) , pp. 267-273
    • Berti, A.C.1    Bolkhovsky, V.2
  • 7
    • 0029736577 scopus 로고
    • Manufacturability Issues for Application of Silicides in 0.25-μm CMOS Processes and Beyond
    • Q.F. Wang et al., "Manufacturability Issues for Application of Silicides in 0.25-μm CMOS Processes and Beyond," Mat. Res. Soc. Symp. Proc., Vol. 402, pp 221-231, 1995.
    • (1995) Mat. Res. Soc. Symp. Proc. , vol.402 , pp. 221-231
    • Wang, Q.F.1
  • 8
    • 0346598557 scopus 로고    scopus 로고
    • Temperature Measurement in Rapid Thermal Processing
    • P.J. Timans, "Temperature Measurement in Rapid Thermal Processing," Solid State Technology, Vol. 40, p. 63, 1997.
    • (1997) Solid State Technology , vol.40 , pp. 63
    • Timans, P.J.1
  • 9
    • 0031333537 scopus 로고    scopus 로고
    • Emissivity-independent Rapid Thermal Processing Using Radiation Shields
    • P.J. Timans, R.N. Morishige, Y. Wasserman, "Emissivity-independent Rapid Thermal Processing Using Radiation Shields," Mat. Res. Soc. Symp. Proc., Vol. 470, p. 57, 1997.
    • (1997) Mat. Res. Soc. Symp. Proc. , vol.470 , pp. 57
    • Timans, P.J.1    Morishige, R.N.2    Wasserman, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.