Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation

Applied Surface Science

Volumn 127-129, Issue , 1998, Pages 994-998

  Morimoto, Akiharu ^a   Shigeno, Hideki ^a,b   Morita, Shinya ^a   Yonezawa, Yasuto ^a,c   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

Author keywords

Nitrogen ambient gas; Oxygen impurity; PLD; PZT capacitors; Si substrate; Ti Al N electrode film

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EXCIMER LASERS; FERROELECTRIC DEVICES; FILM PREPARATION; NITROGEN; OXYGEN; PULSED LASER APPLICATIONS; THIN FILMS;

PULSED LASER ABLATION;

LASER ABLATION;

EID: 0032074111     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00780-0     Document Type: Article

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