Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface

Surface Science

Volumn 405, Issue 1, 1998, Pages 46-53

  Park, K H ^a   Ha, J S ^a   Yun, W S ^a   Lee, E H ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Antimony; Epitaxy; Growth; Low energy electron diffraction (LEED); Scanning tunneling microscopy; Silicon; Silver; Surface diffusion; Surface segregation

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; FILM GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ANTIMONY; SILVER; SUBSTRATES; SURFACE PHENOMENA; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE DIFFUSION; SURFACE SEGREGATION;

SEMICONDUCTING SILICON;

EID: 0032072528     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)01096-0     Document Type: Article

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