30Gbit/s InP DHBT 2:1 selector-driver IC for external laser modulation

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1057-1058

  Meghelli, M ^a   Bouche M ^a   Launay, P ^a   Konczykowska, A ^a  

^a ORANGE LABS   (France)

Author keywords

Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Optical communication

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; INTEGRATED CIRCUIT MANUFACTURE; LIGHT MODULATION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM PHOSPHIDE;

SELECTOR DRIVER INTEGRATED CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031554385     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970726     Document Type: Article

References (5)

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2. REIN, H.M., SCHMID, R., WEGER, P., SMITH, T., HERZOG, T., and LACHNER, R.: 'A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10Gb/s optical-fiber links', IEEE J. Solid-State Circuits, 1994, 29, (9), pp. 1014-1020
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5. LAUNAY, P., CAFFIN, D., DUCHENOIS, A.M., and HÉLIOT, F.: 'A double InGaAs/InP HBT technology for lightwave communication circuits design'. IPRM Conf. Proc., 1996, pp. 701-703