Denuded zone thickness from surface photovoltage measurements: Comparison with microscopy techniques

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1632-1639

  Polignano, M L ^a   Brambilla, M ^a   Cazzaniga, F ^a   Pavia, G ^a   Zanderigo, F ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; OXYGEN; PHOTOCONDUCTIVITY; PRECIPITATION (CHEMICAL); VOLTAGE MEASUREMENT;

DENUDED ZONE DEPTH; SURFACE PHOTOVOLTAGE MEASUREMENT;

THICKNESS MEASUREMENT;

EID: 0032070751     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838528     Document Type: Article

References (31)

1. S. M. Hu, J. Vac. Sci. Technol., 14, 17 (1977).
2. J. R. Patel, K. A. Jackson, and H. Reiss, J. Appl. Phys., 48, 5279 (1977).
3. L. Jastrzebski, IEEE Trans. Electron Devices, ED-29, 475 (1982).
4. K. Nagasawa, Y. Matsushita, and S. Kishino, Appl. Phys. Lett., 37, 622 (1980).
5. R. Falster and W. Bergholz, J. Electrochem. Soc., 137, 1548 (1990).
6. J. Vanhellemont and C. Claeys, in Proceedings of ESS-DERC '87, G. Soncini and P. U. Calzolari, Editors, p. 451, North Holland, Amsterdam (1988).
7. R. Falster, Paper presented at 6th International Symposium on the Structures and Properties of Dislocations in Semiconductors, Oxford, 1989.
8. M. L. Polignano, G. F. Cerofolini, H. Bender, C. Claeys, and J. Reffle, Phys. Status Solidi A, 103, 307 (1987).
9. J. M. Hwang and D. K. Schroder, J. Appl. Phys., 59, 2476 (1986).
10. M. Porrini, D. Gambaro, P. Gerenzani, and R. Falster, in High Purity Silicon IV, C. L. Claeys, P. Rai-Choudhury, P. Stallhofer, and J. E. Maurits, Editors, PV 96-13, p. 169, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
11. S. K. Pang, A. Rohatgi, B. L. Sopori, and G. Fiegl, J. Electrochem. Soc., 137, 1977 (1990).
12. L. Jastrzebski, Mater. Sci. Eng., B4, 113 (1989).
13. G. Obermeier, J. Hage, and D. Huber, J. Appl. Phys., 82, 595 (1997).
14. V. Lehmann and H. Föil, J. Electrochem. Soc., 135, 2831 (1988).
15. H. Föil, Paper presented at Symposium on Advanced Science and Technology of Silicon Material, Kona, HI, 1991.
16. V. Lehmann, H. Föil, L. Bernewitz, and J. G. Grabmaier, JPL Publication 84-23, p. 527 (1984).
17. M. L. Polignano, E. Bellandi, D. Lodi, F. Pipia, A. Sabbadini, F. Zanderigo, and G. Queirolo, Mater. Sci. Eng. B, To be published.
18. A. M. Goodman, J. Appl. Phys., 32, 2550 (1961).
19. L. Jastrzebski, W. Henley, and C. J. Nuese, Solid-State Technol., 35(12), 27 (1992).
20. F. Secco d'Aragona, J. Electrochem. Soc., 119, 948 (1972).
21. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, Appl. Phys. Rev., 77, 4169 (1995).
22. M. L. Polignano, F. Cazzaniga, A. Sabbadini, G. Quirolo, A. Cacciato, and A. Di Bartolo, Mater. Sci. Eng. B, 42, 157 (1996).
23. M. L. Polignano, C. Bresolin, F. Cazzaniga, A. Sabbadini, and G. Quierolo, in Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, J. K. Lowell, R. T. Chen, and J. P. Mathur, Editors, Proc. SPIE 2638, p. 14 (1995); SPIE-Int. Soc. Opt. Eng.
24. J. Lagowski, P. Edelman, A. M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jabstrzebski, and A. M. Hoff, Appl. Phys. Lett., 63, 3043 (1993).
25. L. Jabstrzebski, O. Milic, M. Dexter, J. Lagowski, D. Debusk, K. Nauka, R. Witowski, M. Gordon, and E. Persson, J. Electrochem. Soc., 140, 1152 (1993).
26. W. Zulehner, J. Cryst. Growth, 65, 189 (1983).
27. J. G. Wilkes, J. Cryst. Growth, 65, 214 (1983).
28. J. C. Mikkelsen, Appl. Phys. Lett., 40, 336 (1982).
29. F. Shimura and H. Tsuya, J. Electrochem. Soc., 129, 1062 (1982).
30. A. Bourret, J. Thibault-Desseaux, and D. N. Seidman, J. Appl. Phys., 55, 825 (1984).
31. W. K. Tice and T. Y. Tan, Appl. Phys. Lett., 28, 564 (1976).