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Volumn 227-230, Issue PART 1, 1998, Pages 48-52

Insights into surface reactions during a-SiGe:H deposition and hydrogen plasma annealing as obtained from infrared attenuated total reflection spectroscopy

Author keywords

Amorphous silicon germanium; Attenuated total reflection; Deposition kinetics; Hydrogen plasma annealing; Infrared absorption

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; DEPOSITION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SILANES; SURFACE PHENOMENA;

EID: 0032068765     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00019-2     Document Type: Article
Times cited : (6)

References (17)
  • 1
    • 0003742829 scopus 로고
    • H. Fritzsche (Ed.), World Scientific, Singapore
    • R.W. Collins, Amorphous Silicon and Related Materials, In: H. Fritzsche (Ed.), Vol. B, World Scientific, Singapore, 1989, p. 1003.
    • (1989) Amorphous Silicon and Related Materials , vol.B , pp. 1003
    • Collins, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.