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Volumn 227-230, Issue PART 1, 1998, Pages 48-52
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Insights into surface reactions during a-SiGe:H deposition and hydrogen plasma annealing as obtained from infrared attenuated total reflection spectroscopy
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Author keywords
Amorphous silicon germanium; Attenuated total reflection; Deposition kinetics; Hydrogen plasma annealing; Infrared absorption
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Indexed keywords
AMORPHOUS FILMS;
AMORPHOUS SILICON;
ANNEALING;
CHEMICAL BONDS;
DEPOSITION;
FILM GROWTH;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
PLASMA APPLICATIONS;
SEMICONDUCTING FILMS;
SILANES;
SURFACE PHENOMENA;
INFRARED ATTENUATED TOTAL REFLECTION SPECTROSCOPY;
SILICON GERMANIUM;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0032068765
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00019-2 Document Type: Article |
Times cited : (6)
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References (17)
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