Growth of Bi 12TiO 20 single crystals for high-impedance electro-optic probe applications

NTT Review

Volumn 10, Issue 3, 1998, Pages 62-67

  Miyazawa, Shintaro ^a,b   Tabata, Takuzo ^c  

^a NTT CORPORATION   (Japan)

^b USHIO Res Institute of Technology

^c NTT Advanced Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC IMPEDANCE; ELECTROOPTICAL DEVICES; LATTICE CONSTANTS; LIGHT POLARIZATION; PHASE DIAGRAMS; PHOTOCURRENTS; PHOTODETECTORS; REFRACTIVE INDEX; SHOT NOISE; SINGLE CRYSTALS;

ELECTROOPTIC PROBE; ELECTROOPTIC SAMPLING;

PROBES;

EID: 0032068343     PISSN: 09152334     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. K. J. Weingarten, M. J. Rodwell and D. M. Bloom, "Picosecond optical sampling of GaAs integrated circuits," IEEE J. Quant. Electron., Vol. QE-24, No. 2, p. 198, 1988.
2. M. Shinagawa and T. Nagatsuma, "An automated electro-optic probing system for ultra-high-speed IC's," IEEE Trans. Instr. & Meas., Vol. 43, No. 2, p. 843, 1994.
3. M. Shinagawa and T. Nagatsuma, "A Novel High-Impedance Probe for Multi-Gigahertz Signal Measurement," IEEE Trans. Instr. & Meas., Vol. 45, No. 2, p. 575, 1996.
4. 20 single crystals," Opt. Mat., Vol. 4, No. 1, p. 192, 1995.
5. 20 single crystals doped with P," J. Cryst. Growth, Vol. 167, No. 3/4, p. 638, 1996.
6. 20," J. Appl. Phys., Vol. 67, No. 5, p. 2245, 1990.
7. M. Shinagawa, T. Nagatsuma and S. Miyazawa, "Sensitivity Improvement of an Electro-Optic High-Impedance Probe," IEEE Trans. Instr. & Meas., (in press, 1998) / Proc. of 1997 IEEE Instrum. & Measur. Technol. Conf. (19 ∼ 21 May, 1997, Otawa, Canada, T34-2)
8. 2" J. Sol. Sta. Chem., Vol. 9, No. 2, p. 173, 1974.
9. 3 crystals by the Top Seeded Technique," J. Cryst. Growth, Vol. 23, No. 1, p. 21, 1974.
10. 4," J. Cryst. Growth, Vol. 99, No. 1-4, p. 864 , 1990.
11. 20 by the Czockralski Method," Jpn. J. Appl. Phys., Vol. 30, No. 7B, p. L1307, 1991.
12. 20 single crystals," J. Cryst. Growth (in press, 1998).
13. J. C. Brice, M. J. Hight, O. F. Hill and P. A. C. Whiffin, "Pulling large bismuth-silicon-oxide crystals," Philips Tech. Rev., Vol. 37, p. 250, 1977.
14. A. Jordan, "Solid composition and gallium and Phosphus vacancy concentration," J. Appl. Phys., Vol. 45, No. 7, p. 3472, 1974.
15. R. M. Logan and D. T. J. Hurle, "Calculations of point defect concentrations and nonstoichiometry in GaAs," J. Phys. Chem. Solids, Vol. 32, No. 8, p. 1739, 1971.
16. 20," J. Appl. Phys., Vol. 42, No. 1, p. 493, 1971.