Studies on the suppression of Ge segregation during Si overgrowth on Ge( n ML)/Si( 100) substrates by gas-source MBE

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 105-112

  Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DECAY (ORGANIC); EPITAXIAL GROWTH; HYDROGEN; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; TEMPERATURE;

ATOMIC MIXING; DECAY LENGTH; GROWTH RATE; HOMOEPITAXIAL GROWTH; HYDROGEN ATOMS; ISLAND GROWTH; SURFACE CONCENTRATION;

MOLECULAR BEAM EPITAXY;

EID: 0030563498     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01042-4     Document Type: Article

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