Bias stress reliability of Be-, Zn- and C-doped base microwave HBTs

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1703-1706

  Rezazadeh, A A ^a   Ahmad, T ^a   Crouch, M A ^b  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BIAS STRESS RELIABILITY; CURRENT GAIN DEGRADATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031249820     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00144-3     Document Type: Article

References (3)

1. L. M. Hafizi, et al , IEEE Technical Digest, Electron Device Meeting, pp 329-332 (1990).
2. O. Nakajima, et al, Jpn J. Appl. Phys. Vol 31, pp 2343-2348 (1992).
3. Dangla, et al, Electronics Lett., Vol 26, pp 1061-1063 (July 1990).