Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors

Solid-State Electronics

Volumn 39, Issue 12, 1996, Pages 1709-1721

  Zhou, W ^a   Sheu, S ^a   Liou, J J ^a   Huang, C I ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION; HEAT FLUX; ITERATIVE METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION;

EMITTER FINGER; NEWTON-RAPHSON ALGORITHM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030387556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00123-2     Document Type: Article

References (8)

1. J. J. Liou, Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors. Artech House, Boston. 1996.
2. W. Liu, Emitter-length design for microwave power heterojunction bipolar transistors, Solid-St. Electron., 1993, 36, 885.
3. W. Liu and B. Bayraktaroglu, Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistors, Solid-St. Electron., 1993, 36, 125.
4. R. D. Lindsted and R. J. Surty, Steady-state junction temperatures of semiconductor chips, IEEE Trans. Electron Devices, 1972, 19, 41.
5. G. B. Gao, M. Z. Wang, X. Gui and H. Morkoc, Thermal design studies of high-power heterojunction bipolar transistors, IEEE Trans. Electron Devices, 1989, 40, 854.
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7. A. Marty, T. Camps, J. Tasselli, D. L. Pulfrey and J. P. Bailbe, A self-consistent d.c.-a.c. two-dimensional electrothermal model for GaAlAs/GaAs microwave power HBTs, IEEE. Trans. Electron Devices, 1993, 40, 1202.
8. DAVINCI Manual, Technology Modeling Associates Inc., Palo Alto, CA, 1995.