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Volumn 227-230, Issue PART 1, 1998, Pages 432-436
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Defect distributions in a-SixGe1-x:H
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Author keywords
Alloys; Defects; Density of states; Germanium; Modelling; Silicon
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Indexed keywords
ABSORPTION SPECTROSCOPY;
AMORPHOUS ALLOYS;
COMPUTER SIMULATION;
ELECTRONIC DENSITY OF STATES;
ENERGY GAP;
PHOTHERMAL DEFLECTION SPECTROSCOPY;
PHOTOCURRENT METHOD;
SILICON ALLOYS;
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EID: 0032065062
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00088-X Document Type: Article |
Times cited : (5)
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References (12)
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