Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 351-354

  Siebke, Frank ^a   Stiebig, Helmut ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; COMPUTER SIMULATION; DEFECTS; DEGRADATION; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; ENERGY GAP; MATHEMATICAL MODELS; SPECTROSCOPIC ANALYSIS;

BAND TAILS; CONSTANT PHOTOCURRENT METHOD; DANGLING BONDS; DEFECT DISTRIBUTIONS; DEFECT POOL MODEL; THERMAL EQUILIBRIUM;

AMORPHOUS SILICON;

EID: 17344384497     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00704-0     Document Type: Article

References (6)

1. M.J. Powell and S.C. Deane, Phys. Rev. B48 (1993) 10815.
2. H. Stiebig and F. Siebke, Philos. Mag. B72 (1995) 489.
3. H. Stiebig and F. Siebke, Mater. Res. Soc. Proc. 377 (1995) 287.
4. F. Siebke and H. Stiebig, Mater. Res. Soc. Symp. Proc. 336 (1994) 371.
5. G. Krötz, J. Wind, G. Müller, S. Kalbitzer and H. Mannsperger, Philos. Mag. B63 (1991) 101.
6. W. Beyer and H. Mell, Solid State Commun. 38 (1981) 891.