Growth of InAs nanocrystals embedded in SiO2 films by radio-frequency magnetron cosputtering

Journal of Crystal Growth

Volumn 186, Issue 4, 1998, Pages 480-486

  Shi, J ^a   Zhu, K ^a   Yao, W ^b   Zhang, L ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

Cosputtering; Nanocrystals; Optical properties; TEM

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; NUCLEATION; OPTICAL PROPERTIES; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS;

FRACTAL STRUCTURE; INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032050573     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00820-8     Document Type: Article

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